CGH40006P

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CGH40006P MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGH40006P
Richardson RFPD #: CGH40006P
Description: RF Power Transistor
Min/Mult: 80/80
Datasheet CGH40006P Data Sheet
EDA/CAD Models

CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006P ideal for linear and compressed amplifier circuits. The transistor is available in a solder-down, pill package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 6000
Pout (W) 6
Gain (dB) 13
Supply Voltage (V) 28
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 65
P1dB (W)
Psat (W) 8
Thermal Resistance (°C/W) 9.5
Package Name
Package Type Ceramic Flangeless

Datasheets

  cgh40006p

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