CGH40006S

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CGH40006S MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGH40006S
Richardson RFPD #: CGH40006S
Description: RF Power Transistor
Min/Mult: 1
Datasheet CGH40006S Data Sheet
EDA/CAD Models

CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006S ideal for linear and compressed amplifier circuits. The transistor is available in a 3mm x 3mm, surface mount, quad-flat-no-lead (QFN) package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 6000
Pout (W) 6
Gain (dB) 11.8
Supply Voltage (V) 28
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 53
P1dB (W)
Psat (W) 8
Thermal Resistance (°C/W) 10.1
Package Name 3x3 QFN
Package Type Plastic SMT

Change Notice

  MACOM_PCN-01874

  MACOM_PCN-01874_June3

Datasheets

  cgh40006s

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