CGH40025P

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CGH40025P MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGH40025P
Richardson RFPD #: CGH40025P
Description: RF Power Transistor
Min/Mult: 80/1
Datasheet CGH40025P Data Sheet
EDA/CAD Models

CGH40025P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40025 ideal for linear and compressed amplifier circuits. The transistor is available in a solder-down, pill packages.

A high power RF Amplifier module with this device is available:

1203/BBM3K5ANQ

1119/BBM3K5KHM


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 6000
Pout (W) 25
Gain (dB) 13
Supply Voltage (V) 28
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 62
P1dB (W)
Psat (W) 30
Thermal Resistance (°C/W) 4.8
Package Name
Package Type Ceramic Flangeless

Change Notice

  MACOM_PCN-01753

Datasheets

  cgh40025

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