CGH40035F

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CGH40035F MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGH40035F
Richardson RFPD #: CGH40035F
Description: RF Power Transistor
Min/Mult: 1
Datasheet CGH40035F Data Sheet
EDA/CAD Models

CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40035F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40035F ideal for linear and compressed amplifier circuits. The transistor is available in a screw-down, flange package.

A high power RF Amplifier module with this device is available:

1131/BBM5K8CGM

1119/BBM3K5KHM


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 4000
Pout (W) 35
Gain (dB) 14
Supply Voltage (V) 28
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 60
P1dB (W)
Psat (W) 45
Thermal Resistance (°C/W) 3
Package Name 440193
Package Type Ceramic Flanged

Change Notice

  MACOM_PCN-01753

Datasheets

  cgh40035f

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