CGH40120F

Stock Availability: 224

CGH40120F MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGH40120F
Richardson RFPD #: CGH40120F
Description: RF Power Transistor
Min/Mult: 1
Datasheet CGH40120F Data Sheet
EDA/CAD Models

CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40120F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 3000
Pout (W) 120
Gain (dB) 19
Supply Voltage (V) 28
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 70
P1dB (W)
Psat (W) 120
Thermal Resistance (°C/W) 1.39
Package Name
Package Type Ceramic Flanged

Datasheets

  cgh40120f

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