CGH40120P

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CGH40120P MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGH40120P
Richardson RFPD #: CGH40120P
Description: RF Power Transistor
Min/Mult: 25/1
Datasheet CGH40120P Data Sheet
EDA/CAD Models

CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40120P ideal for linear and compressed amplifier circuits. The transistor is available in a metal-ceramic pill package.

A high power RF Amplifier module with this device is available:

1203/BBM3K5ANQ

1208/BBM3K5OKO


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 2500
Pout (W) 100
Gain (dB) 15.5
Supply Voltage (V) 28
50 Ohm Matching
Test signal Pulsed
Pulse Width 100
Duty Cycle 10
Efficiency (%) 60
P1dB (W)
Psat (W) 120
Thermal Resistance (°C/W) 1.32
Package Name
Package Type Ceramic Flangeless

Datasheets

  cgh40120p

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25:  $419.6000
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