CGH40180PP


Stock Availability: 9

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGH40180PP
Richardson RFPD #: CGH40180PP
Description: RF Power Transistor
Min/Mult: 1
Datasheet CGH40180PP Data Sheet
EDA/CAD Models

CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40180PP ideal for linear and compressed amplifier circuits. The transistor is available in a 4-lead flange package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 3000
Pout (W) 180
Gain (dB) 19
Supply Voltage (V) 28
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 65
P1dB (W)
Psat (W) 220
Thermal Resistance (°C/W) 0.9
Package Name
Package Type Ceramic Flanged

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