CGH55015F2
Stock Availability: 2
| Manufacturer: | MACOM Technology Solutions |
|---|---|
| Mfg #: | CGH55015F2 |
| Richardson RFPD #: | CGH55015F2 |
| Description: | RF Power Transistor |
| Min/Mult: | 100/100 |
| Datasheet |
CGH55015F2 
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| EDA/CAD Models |
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CGH55015F2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2 ideal for C-band pulsed or CW saturated amplifiers. The transistor is available in a flange package. Based on appropriate external match adjustment, the CGH55015F2 is suitable for applications up to 6 GHz.