CGH55015F2

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CGH55015F2 MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGH55015F2
Richardson RFPD #: CGH55015F2
Description: RF Power Transistor
Min/Mult: 1
Datasheet CGH55015F2 Data Sheet
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CGH55015F2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2 ideal for C-band pulsed or CW saturated amplifiers. The transistor is available in a flange package. Based on appropriate external match adjustment, the CGH55015F2 is suitable for applications up to 6 GHz.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 4500
Maximum Frequency (MHz) 6000
Pout (W) 10
Gain (dB) 12
Supply Voltage (V) 28
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 60
P1dB (W)
Psat (W) 13
Thermal Resistance (°C/W) 8
Package Name
Package Type Ceramic Flanged

Change Notice

  MACOM_PCN-01753

Datasheets

  cgh55015

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Stock: 2 Units

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