CGH55030P2

Stock Availability: 7

CGH55030P2 MACOM Technology Solutions
Enlarge

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGH55030P2
Richardson RFPD #: CGH55030P2
Description: RF Power Transistor
Min/Mult: 1
EDA/CAD Models

CGH55030P2 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030P2 ideal for C-band pulsed or CW saturated amplifiers. The transistor is available in solder-down, pill packages. Based on appropriate external match adjustment, the CGH55030P2 is suitable for applications up to 6 GHz.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 4500
Maximum Frequency (MHz) 6000
Pout (W) 25
Gain (dB) 11
Supply Voltage (V) 28
50 Ohm Matching
Test signal
Pulse Width
Duty Cycle
Efficiency (%) 60
P1dB (W)
Psat (W) 30
Thermal Resistance (°C/W) 4.8
Package Name
Package Type Ceramic Flangeless

Stock

 Ready for Immediate Shipment
Stock: 7 Units

Order

 Pricing in (USD)
Unit Price:
1:  $81.6600