CGHV14250F

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CGHV14250F MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGHV14250F
Richardson RFPD #: CGHV14250F
Description: RF Power Transistor
Min/Mult: 25/1
Datasheet CGHV14250F Data Sheet
EDA/CAD Models

CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from 900 through 1800 MHz.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 1200
Maximum Frequency (MHz) 1400
Pout (W) 330
Gain (dB) 18.2
Supply Voltage (V) 50
50 Ohm Matching
Test signal Pulsed
Pulse Width 500
Duty Cycle 10
Efficiency (%) 77
P1dB (W)
Psat (W) 330
Thermal Resistance (°C/W) 0.95
Package Name 440162
Package Type Ceramic Flanged

Datasheets

  cghv14250

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