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Product image for reference only. For precise specifications, refer to datasheet.
CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from 900 through 1800 MHz.
cghv14250
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