CGHV14250P

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CGHV14250P MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGHV14250P
Richardson RFPD #: CGHV14250P
Description: RF Power Transistor
Min/Mult: 50/1
Datasheet CGHV14250P Data Sheet
EDA/CAD Models

CGHV14250P is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250P ideal for 1.2 - 1.4 GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from 900 through 1800 MHz.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 1200
Maximum Frequency (MHz) 1400
Pout (W) 330
Gain (dB) 18.2
Supply Voltage (V) 50
50 Ohm Matching
Test signal Pulsed
Pulse Width 500
Duty Cycle 10
Efficiency (%) 77
P1dB (W)
Psat (W) 330
Thermal Resistance (°C/W) 0.95
Package Name 440161
Package Type Ceramic Flangeless

Datasheets

  cghv14250

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