CGHV14500F

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CGHV14500F MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGHV14500F
Richardson RFPD #: CGHV14500F
Description: RF Power Transistor
Min/Mult: 1
Datasheet CGHV14500F Data Sheet
EDA/CAD Models

CGHV14500F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from 800 through 1600 MHz.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 1200
Maximum Frequency (MHz) 1400
Pout (W) 500
Gain (dB) 16.2
Supply Voltage (V) 50
50 Ohm Matching
Test signal Pulsed
Pulse Width 500
Duty Cycle 10
Efficiency (%) 68
P1dB (W)
Psat (W) 530
Thermal Resistance (°C/W) 0.47
Package Name 440117
Package Type Ceramic Flanged

Datasheets

  cghv14500f

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Stock: 7 Units

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