CGHV14800F
Stock Availability: 27
| Manufacturer: | MACOM Technology Solutions |
|---|---|
| Mfg #: | CGHV14800F |
| Richardson RFPD #: | CGHV14800F |
| Description: | RF Power Transistor |
| Min/Mult: | 10/1 |
| Datasheet |
CGHV14800F 
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| EDA/CAD Models |
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CGHV14800F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14800F ideal for 1.2 - 1.4 GHz pulsed L-Band radar amplifier applications, such as air traffic control (ATC) radar, weather radar, penetration radars, antimissile system radars, target tracking radars and long range surveillance radars. The GaN HEMT typically operates at 50 V, typically delivering >65% drain efficiency.
Datasheets