CGHV14800F


Stock Availability: 27

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGHV14800F
Richardson RFPD #: CGHV14800F
Description: RF Power Transistor
Min/Mult: 1
Datasheet CGHV14800F Data Sheet
EDA/CAD Models

CGHV14800F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14800F ideal for 1.2 - 1.4 GHz pulsed L-Band radar amplifier applications, such as air traffic control (ATC) radar, weather radar, penetration radars, antimissile system radars, target tracking radars and long range surveillance radars. The GaN HEMT typically operates at 50 V, typically delivering >65% drain efficiency.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 1200
Maximum Frequency (MHz) 1400
Pout (W) 800
Gain (dB) 15.2
Supply Voltage (V) 50
50 Ohm Matching
Test signal Pulsed
Pulse Width 100
Duty Cycle 5
Efficiency (%) 73
P1dB (W)
Psat (W) 910
Thermal Resistance (°C/W) 0.16
Package Name 440117
Package Type Ceramic Flanged

Datasheets

  cghv14800

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