CGHV1F025S

Stock Availability: 482

CGHV1F025S MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGHV1F025S
Richardson RFPD #: CGHV1F025S
Description: RF Power Transistor
Min/Mult: 1
Datasheet CGHV1F025S Data Sheet
EDA/CAD Models

CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and Ku-Band amplifier applications. The datasheet specifications are based on a X-Band (8.9 - 9.6 GHz) amplifier. The CGHV1F025S operates on a 40 volt rail circuit while housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can operate below 40V to as low as 20V VDD, maintaining high gain and efficiency.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 15000
Pout (W) 25
Gain (dB) 14
Supply Voltage (V) 40
50 Ohm Matching
Test signal Pulsed
Pulse Width 100
Duty Cycle 10
Efficiency (%) 53
P1dB (W)
Psat (W)
Thermal Resistance (°C/W) 3.4
Package Name DFN
Package Type Plastic SMT

Change Notice

  MACOM_PCN-01874

  MACOM_PCN-01874_June3

Datasheets

  cghv1f025s

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Stock: 482 Units

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