CGHV1J006D-GP4

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CGHV1J006D-GP4 MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGHV1J006D-GP4
Richardson RFPD #: CGHV1J006D-GP4
Description: RF Power Transistor
Min/Mult: 10/1
Datasheet CGHV1J006D-GP4 Data Sheet
EDA/CAD Models

CGHV1J006D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 18000
Pout (W) 6
Gain (dB) 17
Supply Voltage (V) 40
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 60
P1dB (W)
Psat (W) 6
Thermal Resistance (°C/W) 13.2
Package Name
Package Type Die

Datasheets

  cghv1j006d

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