CGHV1J025D-GP4

Stock Availability: 70

CGHV1J025D-GP4 MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGHV1J025D-GP4
Richardson RFPD #: CGHV1J025D-GP4
Description: RF Power Transistor
Min/Mult: 10/1
Datasheet CGHV1J025D-GP4 Data Sheet
EDA/CAD Models

CGHV1J025D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 um gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 18000
Pout (W) 25
Gain (dB) 17
Supply Voltage (V) 40
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 60
P1dB (W)
Psat (W) 25
Thermal Resistance (°C/W) 3.91
Package Name
Package Type Die

Datasheets

  cghv1j025d

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Stock: 70 Units

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10:  $200.4000
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