CGHV1J025D-GP4
Stock Availability: 40
| Manufacturer: | MACOM Technology Solutions |
|---|---|
| Mfg #: | CGHV1J025D-GP4 |
| Richardson RFPD #: | CGHV1J025D-GP4 |
| Description: | RF Power Transistor |
| Min/Mult: | 1 |
| Datasheet |
CGHV1J025D-GP4 
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| EDA/CAD Models |
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CGHV1J025D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 um gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is ideal for a variety of applications operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.
Datasheets