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CGHV31500F

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CGHV31500F MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGHV31500F
Richardson RFPD #: CGHV31500F
Description: RF Power Transistor
Min/Mult: 10/1
Datasheet CGHV31500F Data Sheet
EDA/CAD Models

CGHV31500F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV31500F ideal for 2.7 - 3.1 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package, type 440217.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 2700
Maximum Frequency (MHz) 3100
Pout (W) 500
Gain (dB) 12.5
Supply Voltage (V) 50
50 Ohm Matching Input/Output
Test signal Pulsed
Pulse Width 100
Duty Cycle 10
Efficiency (%) 67
P1dB (W)
Psat (W) 650
Thermal Resistance (°C/W) 0.22
Package Name 440226
Package Type Ceramic Flanged

Change Notice

  MACOM_PCN-01996

Datasheets

  cghv31500f

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