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CGHV31500F1

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CGHV31500F1 MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGHV31500F1
Richardson RFPD #: CGHV31500F1
Description: RF Power Transistor
Min/Mult: 25/1
Datasheet CGHV31500F1 Data Sheet
EDA/CAD Models

CGHV31500F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency and high gain for the 2.7 - 3.1 GHz S-Band radar band. The device has been developed with long pulse capability to meet the developing trends in radar architectures. The transistor is matched to 50-ohms on the input and 50-ohms on the output. The CGHV31500F1 is based on high power density 50 V, 0.4 um GaN on silicon carbide (SiC) manufacturing process. The transistor is supplied in a ceramic/metal flange package of type 440226.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 2700
Maximum Frequency (MHz) 3100
Pout (W) 500
Gain (dB) 14.5
Supply Voltage (V) 50
50 Ohm Matching Input/Output
Test signal Pulsed
Pulse Width 2000
Duty Cycle 20
Efficiency (%) 71
P1dB (W)
Psat (W) 500
Thermal Resistance (°C/W) 0.4
Package Name 440226
Package Type Ceramic Flanged

Change Notice

  MACOM_PCN-01996

Datasheets

  cghv31500f1

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