CGHV35060MP

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CGHV35060MP MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGHV35060MP
Richardson RFPD #: CGHV35060MP
Description: RF Power Transistor
Min/Mult: 1
Datasheet CGHV35060MP Data Sheet
EDA/CAD Models

CGHV35060MP is a 60W input matched, gallium nitride (GaN) high electron mobility transistor (HEMT) optimized for S Band performance. The CGHV35060MP is suitable for typical bands of 2.7-3.1GHz and 3.1-3.5GHz while the input matched transistor provides optimal gain, power and efficiency in a small 6.5mm x 4.4mm plastic surface mount (SMT) package. The typical performance plots in the datasheet are derived with CGHV35060MP matched into a 3.1-3.5 GHz high power amplifier.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 2700
Maximum Frequency (MHz) 3800
Pout (W) 60
Gain (dB) 16.3
Supply Voltage (V) 50
50 Ohm Matching Input
Test signal Pulsed
Pulse Width 100
Duty Cycle 10
Efficiency (%) 35
P1dB (W)
Psat (W) 75
Thermal Resistance (°C/W) 1.95
Package Name
Package Type Plastic SMT

Change Notice

  MACOM_PCN-01874

  MACOM_PCN-01874_June3

Datasheets

  cghv35060mp

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