CGHV35120F

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CGHV35120F MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGHV35120F
Richardson RFPD #: CGHV35120F
Description: RF Power Transistor
Min/Mult: 20/1
Datasheet CGHV35120F Data Sheet
EDA/CAD Models

CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F ideal for 3.1 - 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 3100
Maximum Frequency (MHz) 3500
Pout (W) 120
Gain (dB) 12.8
Supply Voltage (V) 48
50 Ohm Matching
Test signal Pulsed
Pulse Width 100
Duty Cycle 10
Efficiency (%) 63
P1dB (W)
Psat (W) 134
Thermal Resistance (°C/W) 1.2
Package Name 440162
Package Type Ceramic Flanged

Datasheets

  cghv35120f

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