CGHV35400F1

CGHV35400F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency and high gain for the 2.9 - 3.5 GHz S-Band radar band. The device has been developed with long pulse capability to meet the developing trends in radar architectures. The transistor is matched to 50-ohms on the input and 50-ohms on the output. The CGHV35400F1 is based on high power density 50 V, 0.4 um GaN on silicon carbide (SiC) manufacturing process. The transistor is supplied in a ceramic/ metal flange package of type 440226.