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CGHV37400F

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CGHV37400F MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGHV37400F
Richardson RFPD #: CGHV37400F
Description: RF Power Transistor
Min/Mult: 10/1
Datasheet CGHV37400F Data Sheet
EDA/CAD Models

CGHV37400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV37400F ideal for 3.5 - 3.7 GHz S-Band radar amplifier applications. The transistor is matched to 50-ohms on the input and 50-ohms on the output. The CGHV35400 is based on GaN on silicon carbide (SiC) foundry process. The transistor is supplied in a ceramic/metal flange package, type 440217.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 3500
Maximum Frequency (MHz) 3700
Pout (W) 400
Gain (dB) 14
Supply Voltage (V) 50
50 Ohm Matching Input/Output
Test signal Pulsed
Pulse Width 100
Duty Cycle 10
Efficiency (%) 55
P1dB (W)
Psat (W) 525
Thermal Resistance (°C/W) 0.22
Package Name 440217
Package Type Ceramic Flanged

Datasheets

  cghv37400f

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