CGHV40030F

Stock Availability: 6

CGHV40030F MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGHV40030F
Richardson RFPD #: CGHV40030F
Description: RF Power Transistor
Min/Mult: 1
Datasheet CGHV40030F Data Sheet
EDA/CAD Models

CGHV40030F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band amplifier applications. The datasheet specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030F operates on a 50 volt rail circuit while housed in a 2-lead flange package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 6000
Pout (W) 30
Gain (dB) 16.6
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 64
P1dB (W)
Psat (W) 30
Thermal Resistance (°C/W) 5.9
Package Name 440166
Package Type Ceramic Flanged

Change Notice

  MACOM_PCN-01753

Datasheets

  cghv40030

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Stock: 6 Units

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