CGHV40180F

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CGHV40180F MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGHV40180F
Richardson RFPD #: CGHV40180F
Description: RF Power Transistor
Min/Mult: 25/25
Datasheet CGHV40180F Data Sheet
EDA/CAD Models

CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40180F ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead flange package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 2000
Pout (W) 180
Gain (dB) 24
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 74
P1dB (W)
Psat (W) 250
Thermal Resistance (°C/W) 0.95
Package Name 440223
Package Type Ceramic Flanged

Datasheets

  cghv40180f

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