CGHV40180P

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CGHV40180P MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGHV40180P
Richardson RFPD #: CGHV40180P
Description: RF Power Transistor
Min/Mult: 1
Datasheet CGHV40180P Data Sheet
EDA/CAD Models

CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40180P ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead pill package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 0
Maximum Frequency (MHz) 2000
Pout (W) 180
Gain (dB) 24
Supply Voltage (V) 50
50 Ohm Matching
Test signal CW
Pulse Width
Duty Cycle
Efficiency (%) 69
P1dB (W)
Psat (W) 250
Thermal Resistance (°C/W) 0.87
Package Name 440206
Package Type Ceramic Flangeless

Datasheets

  cghv40180p

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