CGHV50200F

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CGHV50200F MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGHV50200F
Richardson RFPD #: CGHV50200F
Description: RF Power Transistor
Min/Mult: 1
Datasheet CGHV50200F Data Sheet
EDA/CAD Models

CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0 GHz C-Band SatCom applications and Beyond Line of Sight. The GaN HEMT is matched to 50 ohm, for ease of use. It is designed for CW, pulse, and linear mode of power amplifier operation. The transistor is supplied in a ceramic/metal flange package, type 440217.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 4400
Maximum Frequency (MHz) 5000
Pout (W) 200
Gain (dB) 12.4
Supply Voltage (V) 40
50 Ohm Matching Input/Output
Test signal OQPSK
Pulse Width
Duty Cycle
Efficiency (%) 37
P1dB (W)
Psat (W) 180
Thermal Resistance (°C/W) 0.81
Package Name 440217
Package Type Ceramic Flanged

Datasheets

  cghv50200f

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