CGHV59070F

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CGHV59070F MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGHV59070F
Richardson RFPD #: CGHV59070F
Description: RF Power Transistor
Min/Mult: 1
Datasheet CGHV59070F Data Sheet
EDA/CAD Models

CGHV59070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV59070F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 4400
Maximum Frequency (MHz) 5900
Pout (W) 70
Gain (dB) 14.3
Supply Voltage (V) 50
50 Ohm Matching
Test signal Pulsed
Pulse Width 100
Duty Cycle 10
Efficiency (%) 54
P1dB (W)
Psat (W) 90
Thermal Resistance (°C/W) 2.99
Package Name 440224
Package Type Ceramic Flanged

Datasheets

  cghv59070

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