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CGHV59350F

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CGHV59350F MACOM Technology Solutions
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGHV59350F
Richardson RFPD #: CGHV59350F
Description: RF Power Transistor
Min/Mult: 10/1
Datasheet CGHV59350F Data Sheet
EDA/CAD Models

CGHV59350F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV59350F ideal for 5.2 - 5.9 GHz C-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 5200
Maximum Frequency (MHz) 5900
Pout (W) 350
Gain (dB) 10.7
Supply Voltage (V) 50
50 Ohm Matching Input/Output
Test signal Pulsed
Pulse Width 100
Duty Cycle 10
Efficiency (%) 60
P1dB (W)
Psat (W) 470
Thermal Resistance (°C/W) 0.31
Package Name 440217
Package Type Ceramic Flanged

Change Notice

  MACOM_PCN-01996

Datasheets

  cghv59350

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