CGHV96130F


Stock Availability: 5

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: MACOM Technology Solutions
Mfg #: CGHV96130F
Richardson RFPD #: CGHV96130F
Description: RF Power Transistor
Min/Mult: 1
Datasheet CGHV96130F Data Sheet
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CGHV96130F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 8400
Maximum Frequency (MHz) 9600
Pout (W) 130
Gain (dB) 12.2
Supply Voltage (V) 40
50 Ohm Matching Input/Output
Test signal Pulsed
Pulse Width 100
Duty Cycle 10
Efficiency (%) 42
P1dB (W)
Psat (W) 166
Thermal Resistance (°C/W) 0.73
Package Name 440217
Package Type Ceramic Flanged

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1:  $1,743.1800
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