80-105 GHz Balanced Low Noise Amplifier. GaAs Monolithic Microwave IC. UMS develops a balanced, four-stage, low noise monolithic amplifier which operates between 80 and 105GHz. This broadband amplifier delivers 16dB linear gain (average from 80 to 105 GHz) associated with a minimum of 5dB Noise Figure from 80 to 90 GHz (6.5dB Noise Figure from 90 to 100 GHz and typically 7.5 dB from 100 to 105 GHz), featuring good Return Losses for the broad bandwidth. The overall power supply is of 2.5V/115mA. The circuit is designed to Millimeter-Wave Imaging and also well suited for commercial digital radios and wireless LANs. It is developed on a 0.10µm gate length pHEMT process, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
