CHA2069-QDG/20


Stock Availability: 28

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA2069-QDG/20
Richardson RFPD #: CHA2069-QDG/20
Description: mmW LNA
Min/Mult: 1
Datasheet CHA2069-QDG/20 Data Sheet
EDA/CAD Models

18-30GHz Low Noise Amplifier. GaAs Monolithic Microwave IC in SMD leadless package. The CHA2069-QDG is a three-stage self-biased wide band monolithic low noise amplifier. Typical applications range from telecommunication (point to point, point to multi-point, VSAT) to ISM and military markets. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in lead-free SMD package.


Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 18000
Maximum Frequency (MHz) 31000
Gain (dB) 19.5
Gain Flatness (dB) 2
Noise Figure (dB) 3
P1dB (dBm) 10.5
Output IP3 (dBm) 18.5
Package Type QFN

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