UMS is developing an E-Band (71 to 86 GHz) Low Noise Amplifier with variable gain. This amplifier integrates four stages with 3.5dB Noise Figure associated with 22dB Gain and +10dBm Output Power at 1dB Gain compression. This circuit is dedicated to telecommunication, particularly well suited for the two main E-Bands used in new generation of High Capacity Backhaul. It is manufactured on 0.1µm gate length pHEMT process and is available in chip form, with BCB layer protection.
