CHA2266-99F


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Manufacturer: United Monolithic Semiconductors
Mfg #: CHA2266-99F
Richardson RFPD #: CHA2266-99F/00
Description: RF & MW LNA
Min/Mult: 100/1
Datasheet CHA2266-99F/00 Data Sheet
EDA/CAD Models

The CHA2266 is a self biased, low-noise high gain driver amplifier. It is designed mainly for VSAT applications in Ku-band. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured on a standard GaAs PHEMT process, with via holes through the substrate, air bridges and electron beam gate lithography.

Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 12500
Maximum Frequency (MHz) 17000
Gain (dB) 34
Gain Flatness (dB) 0.5
Noise Figure (dB) 2.5
P1dB (dBm) 14.5
Output IP3 (dBm)
Phase Noise @ offset (dBc/Hz)
Supply Voltage (V) 4
Current (mA) 130
Package Type Chip

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