2-18 GHZ Low Noise Amplifier. GaAs Monolithic Microwave IC. UMS develops a 2-18GHz wide band low noise amplifier. The wide frequency band associated to a 2dB low noise figure makes this circuit very versatile for very high performance systems. The typical gain is 24dB and the overall power supply is of 5V/120mA. The circuit is dedicated to defence and space application and also well suited for a wide range of microwave and millimetre wave applications and systems. It is developed on a robust 0.15µm gate length pHEMT process, and will be available as a bare die, compliant with the Restriction of Hazardous Substances (RoHS) European Union directive 2002/95/EC
