CHA3656-QAG/20

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CHA3656-QAG/20 United Monolithic Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA3656-QAG/20
Richardson RFPD #: CHA3656-QAG/20
Description: RF & MW LNA
Min/Mult: 120/120
Datasheet CHA3656-QAG/20 Data Sheet
EDA/CAD Models

5.8-17 GHz Low Noise Amplifier.  GaAs Monolithic Microwave IC in SMD leadless package. The CHA3656-QAG is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package.

Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 5800
Maximum Frequency (MHz) 17000
Gain (dB) 20
Gain Flatness (dB)
Noise Figure (dB) 1.7
P1dB (dBm) 14
Output IP3 (dBm) 24
Phase Noise @ offset (dBc/Hz)
Supply Voltage (V) 3
Current (mA) 68
Package Type QFN

Change Notice

  UMS_PCN_2024_008

  UMS_PCN_2023_002

Datasheets

  CHA3656-QAG

Stock

 Request Quote for Lead Time
Unit Price: Pricing in (USD)
120:  $33.6700
360:  $31.1100
600:  $29.5200

Must order in multiple of 120

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