CHA3666-99F/00

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CHA3666-99F/00 United Monolithic Semiconductors
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Manufacturer: United Monolithic Semiconductors
Mfg #: CHA3666-99F/00
Richardson RFPD #: CHA3666-99F/00
Description: RF & MW LNA
Min/Mult: 100/1
Datasheet CHA3666-99F/00 Data Sheet
EDA/CAD Models

The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 6000
Maximum Frequency (MHz) 17000
Gain (dB) 21
Gain Flatness (dB) 0.5
Noise Figure (dB) 1.8
P1dB (dBm) 17
Output IP3 (dBm) 47
Phase Noise @ offset (dBc/Hz)
Supply Voltage (V) 4
Current (mA) 80
Package Type Chip

Datasheets

  CHA3666-99F

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