CHA3666-QAG/21

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CHA3666QAG/21 United Monolithic Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA3666-QAG/21
Richardson RFPD #: CHA3666QAG/21
Description: RF & MW LNA
Min/Mult: 3,000/1
Datasheet CHA3666QAG/21 Data Sheet
EDA/CAD Models

The CHA3666-QAG is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in lead-free package.

Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 5800
Maximum Frequency (MHz) 17000
Gain (dB) 21
Gain Flatness (dB) 0.5
Noise Figure (dB) 1.8
P1dB (dBm) 16
Output IP3 (dBm) 26
Phase Noise @ offset (dBc/Hz)
Supply Voltage (V) 4
Current (mA) 80
Package Type QFN

Change Notice

  UMS_PCN_2024_008

Datasheets

  CHA3666-QAG

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