CHA3688AQDG

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CHA3688AQDG United Monolithic Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA3688AQDG
Richardson RFPD #: CHA3688AQDG
Description: mmW LNA
Min/Mult: 90/1
Datasheet CHA3688AQDG Data Sheet
EDA/CAD Models

The CHA3688aQDG is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard P-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in lead-free package.

Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 12500
Maximum Frequency (MHz) 30000
Gain (dB) 26
Gain Flatness (dB) 2
Noise Figure (dB) 2.2
P1dB (dBm) 14
Output IP3 (dBm) 26
Package Type QFN

Change Notice

  UMS_PCN_2023_002

Datasheets

  CHA3688aQDG

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