CHA3688AQDG/20

Stock Availability: 157

CHA3688AQDG/20 United Monolithic Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA3688AQDG/20
Richardson RFPD #: CHA3688AQDG/20
Description: RF & MW LNA
Min/Mult: 90/90
Datasheet CHA3688AQDG/20 Data Sheet
EDA/CAD Models

The CHA3688aQDG is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard P-HEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in lead-free package.


Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 12500
Maximum Frequency (MHz) 30000
Gain (dB) 26
Gain Flatness (dB) 2
Noise Figure (dB) 2.2
P1dB (dBm) 14
Output IP3 (dBm) 25
Phase Noise @ offset (dBc/Hz)
Supply Voltage (V) 4
Current (mA) 85
Package Type QFN

Datasheets

  CHA3688AQDG

Stock

 Ready for Immediate Shipment
Stock: 157 Units
Unit Price: Pricing in (USD)
90:  $35.6200
180:  $33.5900
270:  $31.0200
540:  $29.4500

Must order in multiple of 90