CHA4107-99F/00
Stock Availability: 72
| Manufacturer: | United Monolithic Semiconductors |
|---|---|
| Mfg #: | CHA4107-99F/00 |
| Richardson RFPD #: | CHA4107-99F/00 |
| Description: | RF & MW Driver Amplifier |
| Min/Mult: | 100/100 |
| Datasheet |
CHA4107-99F/00 
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| EDA/CAD Models |
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C-Band Medium Power Amplifier; GaAs Monolithic Microwave IC. CHA4107 is a monolithic 5-6GHz band Medium Power Amplifier for space, defence and ISM applications. This is a two-stage GaAs pHEMT amplifier providing typically 25dBm output power associated to 35% power added efficiency at 3dB gain compression, and a high 26dB linear gain. The overall power supply is of 8.0V / 100mA. The chip size is 2.37x1.5x0.07mm³. It is developed on a robust 0.25µm gate length pHEMT process, and will be available as a bare die, compliant with the Restriction of Hazardous Substances (RoHS) European Union directive 2002/95/EC.
| Other Attributes | Value |
|---|---|
| Supply Voltage (V) | 8 |
Datasheets