CHA5618-99F

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CHA5618-99F/00 United Monolithic Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA5618-99F
Richardson RFPD #: CHA5618-99F/00
Description: RF & MW Power Amplifier
Min/Mult: 25/1
Datasheet CHA5618-99F/00 Data Sheet
EDA/CAD Models

The CHA5618-99F is a monolithic GaN Driver Amplifier in the frequency band 6-18GHz with a control interface for speed switching. This driver provides 28dBm of Output Power. The circuit exhibits a small signal gain of 22dB. The overall power supply is of 20V/150mA (quiescent current). It is designed for a wide range of applications, for military systems, such as electronic warfare, and test instrumentation. The part is manufactured on robust GaN HEMT technology and is available as a bare die.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 6000
Maximum Frequency (MHz) 18000
Gain (dB) 22
Gain Flatness (dB)
Efficiency (%)
Supply Voltage (V) 20
P1dB (dBm)
Psat (W) 0.63
PAvg (W)
Package Type Die

Datasheets

  CHA5618-99F

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 Pricing in (USD)
Unit Price:
25:  $266.6700
50:  $169.7400
100:  $128.7800
500:  $116.7100
1000:  Get Quote


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