CHA6005-QEG/20


Stock Availability: 79

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA6005-QEG/20
Richardson RFPD #: CHA6005-QEG/20
Description: RF & MW Power Amplifier
Min/Mult: 73/1
Datasheet CHA6005-QEG/20 Data Sheet
EDA/CAD Models

8-12 GHz High Power Amplifier GaAs Monolithic Microwave IC. The CHA6005-QEG is a high power amplifier monolithic circuit, which integrates two stages and produces 31.5dBm output power associated to a high power added efficiency of 33%. It is designed for a wide range of applications, from profesional to commercial communications systems. The circuit is manufactured with a pHEMT process, 0.25um gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package.


Key Attributes Value Search Similar
Technology GaAs
Minimum Frequency (MHz) 8000
Maximum Frequency (MHz) 12000
Gain (dB) 19.5
Gain Flatness (dB)
Efficiency (%)
Supply Voltage (V) 8
P1dB (dBm) 31.5
Psat (W)
PAvg (W)
Package Type Surface Mount

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