CHA6262-99F

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CHA6262-99F/00 United Monolithic Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA6262-99F
Richardson RFPD #: CHA6262-99F/00
Description: RF & MW Power Amplifier
Min/Mult: 50/1
Datasheet CHA6262-99F/00 Data Sheet
EDA/CAD Models

The CHA6262-99F is a three-stage GaN High Power Amplifier operating in the frequency band 17.3-21.5GHz. This HPA typically provides 4W output power associated to 36% of Power Added Efficiency. The circuit exhibits a typical small signal gain of 30dB. The overall power supply is 18V/182mA. This HPA is dedicated to Space applications and well suited for a wide range of microwave applications and systems. This HPA is dedicated to Space applications and well suited for a wide range of microwave applications and systems. The product is developed on a robust 0.15µm gate length GaN on SiC HEMT process and is available as a bare die.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 17300
Maximum Frequency (MHz) 21500
Gain (dB) 30
Gain Flatness (dB)
Efficiency (%) 36
Supply Voltage (V) 18
P1dB (dBm)
Psat (W) 4
PAvg (W)
Package Type Die

Datasheets

  CHA6262-99F

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50:  $147.8100
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