CHA6357-98F/00
Stock Availability: 0
| Manufacturer: | United Monolithic Semiconductors |
|---|---|
| Mfg #: | CHA6357-98F/00 |
| Richardson RFPD #: | CHA6357-98F/00 |
| Description: | RF & MW Power Amplifier |
| Min/Mult: | 100/100 |
| Datasheet |
CHA6357-98F/00 |
| EDA/CAD Models |
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The CHA6357-98F is a bare die three-stage GaN Power Amplifier operating between 27GHz and 31GHz. This amplifier typically provides 5W of saturated Output Power associated to 23% and 24dB of Power Gain. This amplifier exhibits 33dBm Linear Power with -30dBc ACPR and 27dB Gain. In addition, the CHA6357 provides high linearity with a low consumption when operated with output power back-off. It therefore can be used as a Driver of HPA.
The component is internally matched to 50 Ohm at both the input and output. It integrates output power detector and ESD RF protection. It is manufactured on a robust GaN on SiC HEMT process.
It is well suited for VSAT, SatCom uplink, 5G communication and Radio links applications.
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