CHA6357-98F/00


Stock Availability: 0

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA6357-98F/00
Richardson RFPD #: CHA6357-98F/00
Description: RF & MW Power Amplifier
Min/Mult: 50/1
Datasheet CHA6357-98F/00 Data Sheet
EDA/CAD Models

The CHA6357-98F is a bare die three-stage GaN Power Amplifier operating between 27GHz and 31GHz. This amplifier typically provides 5W of saturated Output Power associated to 23% and 24dB of Power Gain. This amplifier exhibits 33dBm Linear Power with -30dBc ACPR and 27dB Gain. In addition, the CHA6357 provides high linearity with a low consumption when operated with output power back-off. It therefore can be used as a Driver of HPA.

The component is internally matched to 50 Ohm at both the input and output. It integrates output power detector and ESD RF protection. It is manufactured on a robust GaN on SiC HEMT process.

It is well suited for VSAT, SatCom uplink, 5G communication and Radio links applications.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 27000
Maximum Frequency (MHz) 31000
Gain (dB) 30
Gain Flatness (dB)
Efficiency (%) 23
Supply Voltage (V) 25
P1dB (dBm)
Psat (W) 5
PAvg (W)
Package Type Die

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50:  $117.5500
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