CHA6682-98F/00

The CHA6682-98F is a three stage High Power Amplifier operating between 24 and 27.5GHz with integrated power detectors that provides 5W of saturated output power with 32% of Power Added Efficiency. The CHA6682-99F exhibits more than 25dB small signal gain with a typical power supply of 20V/115mA quiescent current. This High Power Amplifier is dedicated to telecommunication applications and well suited for a wide range of microwave applications and systems. The circuit is manufactured on a robust GaN on SiC HEMT process and is available as a bare die with BCB protection layer. The input and output are matched to 50 Ohm and the devices includes integrated ESD RF protection.