CHA6682-QKB/20


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA6682-QKB/20
Richardson RFPD #: CHA6682-QKB
Description: mmW Power Amplifier
Min/Mult: 90/1
Datasheet CHA6682-QKB Data Sheet
EDA/CAD Models

The CHA6682-98F is a three stage High Power Amplifier with integrated power detector and ESD protection. The CHA6682-98F operates between 24 and 27.5 GHz and provides 5W of saturated output power with 32% of Power Added Efficiency. The amplifier exhibits more than 25 dB small signal gain with a typical power supply of 20V/115mA quiescent current. This High Power Amplifier is optimized for a both 5G FR2 wireless infrastructure and satcom applications. The circuit is manufactured on a robust GaN on SiC HEMT process and is available as a bare die with BCB protection layer. The input and output are matched to 50 Ohm.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 24000
Maximum Frequency (MHz) 27500
Gain (dB) 25
Gain Flatness (dB)
Noise Figure (dB)
P1dB (dBm)
Psat (dBm) 37
Output IP3 (dBm)
Efficiency (%) 32
Package Type Die

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