CHA7060-QAB/20


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA7060-QAB/20
Richardson RFPD #: CHA7060-QAB/20
Description: RF & MW Power Amplifier
Min/Mult: 1
Datasheet CHA7060-QAB/20 Data Sheet
EDA/CAD Models

The CHA7060-QAB is a two stages monolithic GaN High Power Amplifier, reaching 12 Watt output power over 5.6-8.5GHz bandwidth.

It offers high linearity performance with 30dB of Gain and an EVM of 33dB at 34dBm average Pout (56MHz modulation bandwidth, 4QAM).

It is dedicated to a wide range of applications such as Point-to-Point Radio.

The circuit is manufactured on a robust GaN-on-SiC HEMT technology and packaged in a standard surface mount 6x6 plastic QFN which is RoHS compliant. Input and output are 50 Ohm matched and integrate ESD RF protections


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 5600
Maximum Frequency (MHz) 8500
Gain (dB) 30
Gain Flatness (dB)
Efficiency (%) 40
Supply Voltage (V) 20
P1dB (dBm)
Psat (W) 12.6
PAvg (W)
Package Type Plastic SMT

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