CHA7060-QAB/20
Stock Availability: 0
| Manufacturer: | United Monolithic Semiconductors |
|---|---|
| Mfg #: | CHA7060-QAB/20 |
| Richardson RFPD #: | CHA7060-QAB/20 |
| Description: | RF & MW Power Amplifier |
| Min/Mult: | 1 |
| Datasheet |
CHA7060-QAB/20 
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| EDA/CAD Models |
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The CHA7060-QAB is a two stages monolithic GaN High Power Amplifier, reaching 12 Watt output power over 5.6-8.5GHz bandwidth.
It offers high linearity performance with 30dB of Gain and an EVM of 33dB at 34dBm average Pout (56MHz modulation bandwidth, 4QAM).
It is dedicated to a wide range of applications such as Point-to-Point Radio.
The circuit is manufactured on a robust GaN-on-SiC HEMT technology and packaged in a standard surface mount 6x6 plastic QFN which is RoHS compliant. Input and output are 50 Ohm matched and integrate ESD RF protections
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