CHA7452-99F


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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA7452-99F
Richardson RFPD #: CHA7452-99F/00
Description: mmW Power Amplifier
Min/Mult: 25/1
Datasheet CHA7452-99F/00 Data Sheet
EDA/CAD Models

The CHA7452-99F is a four stage High Power Amplifier operating between 35.5 and 40.5 GHz and providing typically 9W of saturated output power and 24 % of power added efficiency. The typical power supply is 20V/290mA (quiescent current). Thanks to a low drain voltage biasing, the CHA7452-99F provides a junction temperature below 160°C, even in saturation. The circuit is manufactured on a space evaluated 0.15µm gate length GaN-on-SiC HEMT process and is available in bare die form.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 35500
Maximum Frequency (MHz) 40500
Gain (dB) 29
Gain Flatness (dB)
Noise Figure (dB)
P1dB (dBm)
Psat (dBm) 39.5
Output IP3 (dBm)
Efficiency (%) 24
Package Type Die

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Unit Price:
25:  $365.7500
50:  $327.9500
100:  $256.5000
500:  $236.5700
1000:  Get Quote


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