CHA7455-99F/00


Stock Availability: 0

Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA7455-99F/00
Richardson RFPD #: CHA7455-99F/00
Description: mmW Power Amplifier
Min/Mult: 25/1
Datasheet CHA7455-99F/00 Data Sheet
EDA/CAD Models

The CHA7455-99F is a four-stage High Power Amplifier operating between 39.5 and 42.5 GHz and providing more than 8W of saturated output power and 24% of power added efficiency. The typical power supply is 20V/290mA (quiescent current). For these supply conditions, the CHA7455-99F provides a junction temperature below 160°C, even in saturation. The circuit is manufactured on a space evaluated 0.15μm gate length GaN-on-SiC HEMT process and is available in bare die form. It is well suited for SATCOM downlink and 5G applications


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 39500
Maximum Frequency (MHz) 42500
Gain (dB) 32
Gain Flatness (dB)
Noise Figure (dB)
P1dB (dBm)
Psat (dBm) 39.5
Output IP3 (dBm)
Efficiency (%) 24
Package Type Die

Datasheets

Stock

Request Quote for Lead Time

Order

Pricing in (USD)

Unit Price:
25:  $324.3100
100:  Get Quote


Please notify me when stock becomes available!