CHA7618-99F

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CHA7618-99F/00 United Monolithic Semiconductors
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Product image for reference only. For precise specifications, refer to datasheet.

Manufacturer: United Monolithic Semiconductors
Mfg #: CHA7618-99F
Richardson RFPD #: CHA7618-99F/00
Description: RF & MW Power Amplifier
Min/Mult: 25/1
Datasheet CHA7618-99F/00 Data Sheet
EDA/CAD Models

The CHA7618-99F is a three-stage GaN High Power Amplifier in the frequency band 5.5-18GHz. This HPA typically provides 10W of Output Power associated to 20% of Power Added Efficiency. The circuit exhibits a small signal gain of more than 30dB. The overall power supply is of 18V/0.530A (quiescent current).

This circuit is a very versatile amplifier for high performance systems. The circuit is dedicated to defence applications and well suited for a wide range of microwave applications and systems.

The part is developed on a robust 0.15um gate length GaN HEMT process and is available as a bare die.


Key Attributes Value Search Similar
Technology GaN
Minimum Frequency (MHz) 5500
Maximum Frequency (MHz) 18000
Gain (dB) 30
Gain Flatness (dB)
Efficiency (%) 20
Supply Voltage (V) 18
P1dB (dBm)
Psat (W) 10
PAvg (W)
Package Type Die

Datasheets

  CHA7618-99F

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 Pricing in (USD)
Unit Price:
25:  $467.2200
50:  $416.1800
100:  Get Quote


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